Особенности зонной структуры и механизма латеральной фотопроводимости в гибридных структурах T/SiO-=SUB=-2-=/SUB=-/Si (T=Fe, Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, TiO-=SUB=-2-=/SUB=-)

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چکیده

This paper presents the results of studying lateral photovoltaic effect in hybrid structures based on SiO2/Si depending nature conductivity material upper layer (Fe is a metal, Fe3O4 semimetal, TiO2 semi-insulator). It shown that this observed which depleted region with significant band bending formed at interface. Theoretical calculations photovoltage energy parameters diagrams showed an increase sensitivity photoelectric associated built-in potential has been established transient characteristics effect, such as rise and fall times signal, are determined by configuration RC-filter near-contact region, depends layer. that, case current transfer occurs along inversion layer, serves to generate quasi-pn junction

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ژورنال

عنوان ژورنال: Fizika tverdogo tela

سال: 2022

ISSN: ['0367-3294', '1726-7498']

DOI: https://doi.org/10.21883/ftt.2022.08.52714.363